MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 35 A | ||
Resistance Drain-Source RDS (on) : | 28 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter | Max. | Units | |
VDS VGS |
Drain-to-Source Voltage Gate-to-Source Voltage |
20 ±20 |
V |
ID @ TA = 25 ID @ TA = 100 IDM |
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current |
36 31 140 |
A |
PD @ TA = 25 PD @ TC = 70 |
Maximum Power Dissipation Maximum Power Dissipation |
47 33 |
W |
TJ, TSTG |
Linear Derating Factor Junction and Storage Temperature Range |
0.31 -55 to +175 |
W/ |
Technical/Catalog Information | IRL3714PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 36A |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 18A, 10V |
Input Capacitance (Ciss) @ Vds | 670pF @ 10V |
Power - Max | 47W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 9.7nC @ 4.5V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRL3714PBF IRL3714PBF |