IRL3705ZS

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 60nC @ 5V
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Power - Max: 130W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V
Input Capacitance (Ciss) @ Vds: 2880pF @ 25V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @10V (Silicon Limited)	86
ID @ TC = 100°C	Continuous Drain Current, VGS @10V	61	A
ID @ TC = 25°C	Continuous Drain Current, VGS @10V (Silicon Limited)	75
IDM	Pulsed Drain Current	340
PD @TC = 25°C	Power Dissipation	130	W
	Linear Derating Factor	0.88	W/°C
VGS	Gate-to-Source Voltage	±16	V
EAS(Thermally limited)	Single Pulse Avalanche Energy	120	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	180
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

Description

Specifically designed for Automotive applications,  this HEXFET® Power MOSFET IRL3705ZS utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRL3705ZS combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.