IRL3705NS

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Input Capacitance (Ciss) @ Vds: 3600pF @ 25V
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 89A
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V
Gate Charge (Qg) @ Vgs: 98nC @ 5V


Features:

·Advanced Process Technology
·Surface Mount (IRL3705NS)
·Low-profile through-hole (IRL3705NL)
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
·Logic-Level Gate Drive




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	89Ü	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	63
IDM	Pulsed Drain Current	310
PD @TA = 25°C	Power Dissipation	3.8	W
PD @TC = 25°C	Power Dissipation	170	W
	Linear Derating Factor	1.1	W/°C
VGS	Gate-to-Source Voltage	± 16	V
EAS	Single Pulse Avalanche Energy	340	mJ
IAR	Avalanche Current	46	A
EAR	Repetitive Avalanche Energy	1.7	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

The IRL3705NS is a kind of rectifier utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area. The IRL3705NS is available for lowprofile applications and is available in TO-262 package.

The IRL3705NS  has some features as follows: (1) logic-level gate drive; (2) advanced process technology; (3) surface mount; (4) low-profile through-hole; (5) fast switching; (6) fully avalanche rated.

What comes about is the absolute maximum ratings of IRL3705NS. (1): continuous drain current is 89 A at TC is 25 and is 63 A at TC is 100 ; (2): pulsed drain current is 310 A; (3): power dissipation is 3.8 W at TA is 25 and is 170 W at TC is 25 ; (4): single pulse avalanche energy is 340 mJ; (5): repetitive avalanche energy is 1.7 mJ; (6): storage temperature range is from -55 to 175 ; (7): soldering temperature, for 10 seconds is 300 . Then is its electrical characters at Tj is 25 . (1): gate threshold voltage is from 1.0 V to 2.0 V at VDS is VGS and ID is 250 A; (2): the typical turn-on delay time is 12 ns and rise time is 140 ns,turn-off delay time is 37 ns; (3): the typical internal source inductance is 7.5 nH.