IRL3705NL

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) @ Vds: 3600pF @ 25V
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 89A
Power - Max: 3.8W
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V
Gate Charge (Qg) @ Vgs: 98nC @ 5V


Features:

·Advanced Process Technology
·Surface Mount (IRL3705NS)
·Low-profile through-hole (IRL3705NL)
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
·Logic-Level Gate Drive


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	89Ü	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	63
IDM	Pulsed Drain Current	310
PD @TA = 25°C	Power Dissipation	3.8	W
PD @TC = 25°C	Power Dissipation	170	W
	Linear Derating Factor	1.1	W/°C
VGS	Gate-to-Source Voltage	± 16	V
EAS	Single Pulse Avalanche Energy	340	mJ
IAR	Avalanche Current	46	A
EAR	Repetitive Avalanche Energy	1.7	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Fifth Generation HEXFETs from International Rectifier IRL3705NL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3705NL design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D²Pak IRL3705NL is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL3705NL provides the highest power capability and the lowest possible onresistance in any existing surface mount package.

The D²Pak IRL3705NL is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL3705NL) is available for lowprofile applications.

Parameters:

Technical/Catalog Information	IRL3705NL
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	89A
Rds On (Max) @ Id, Vgs	10 mOhm @ 46A, 10V
Input Capacitance (Ciss) @ Vds	3600pF @ 25V
Power - Max	3.8W
Packaging	Tube
Gate Charge (Qg) @ Vgs	98nC @ 5V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRL3705NL IRL3705NL