MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | 10 V | Continuous Drain Current : | 110 A | ||
Resistance Drain-Source RDS (on) : | 8 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
The features of IRL3502SPbF are Advanced Process Technology, Surface Mount, Optimized for 4.5V-7.0V Gate Drive, Ideal for CPU Core DC-DC Converters, Fast Switching, Lead-Free
These HEXFET Power MOSFETs IRL3502SPbF were designed speoincally to meetthe demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efliciency at minimum cost. The D2Pak is a surface mount power package capable of accommodating die sizes upto HEX-4. It providesthe highest power capability and the lowest possible on-resistance in any existing surface mount package, The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The absolute maximum ratings of IRL3502SPbF are VGS (Gate-to-Source Voltage)=±10V, ID @ TC= 25°C(Continuous Drain Current, VGS @ 4.5V)=110A, ID @ TC = 100°C (Continuous Drain Current, VGS @ 4.5V )=67A, IDM (Pulsed Drain Current)=420A, EAS (Single Pulse Avalanche Energy)=390mJ, PD (@Tc = 25°C Power Dissipation)=140W, IAR( Avalanche Current)= 14A, EAR (Repetitive Avalanche Energy)=14mJ, dv/dt( Peak Diode Recovery dv/dt) =5.0V/ns, TJ (Operating Junction and)= -55 to + 150°C, TSTG(Storage Temperature Range Soldering Temperature, for 10 seconds )=300 (1.6mm from case )°C, RJC( Junction-to-Case )=0.89°C/W, RJA( Junction-to-Ambient )=40°C/W.
Technical/Catalog Information | IRL3502SPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 110A |
Rds On (Max) @ Id, Vgs | 7 mOhm @ 64A, 7V |
Input Capacitance (Ciss) @ Vds | 4700pF @ 15V |
Power - Max | 140W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 110nC @ 4.5V |
Package / Case | D²Pak, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRL3502SPBF IRL3502SPBF |