IRL3502SPBF

MOSFET

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SeekIC No. : 00156652 Detail

IRL3502SPBF: MOSFET

floor Price/Ceiling Price

US $ .61~.61 / Piece | Get Latest Price
Part Number:
IRL3502SPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~2490
  • Unit Price
  • $.61
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 10 V Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 8 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 8 mOhms
Gate-Source Breakdown Voltage : 10 V


Features:






Specifications






Description

      The features of IRL3502SPbF are Advanced Process Technology, Surface Mount, Optimized for 4.5V-7.0V Gate Drive, Ideal for CPU Core DC-DC Converters, Fast Switching, Lead-Free
      These HEXFET Power MOSFETs IRL3502SPbF were designed speoincally to meetthe demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efliciency at minimum cost. The D2Pak is a surface mount power package capable of accommodating die sizes upto HEX-4. It providesthe highest power capability and the lowest possible on-resistance in any existing surface mount package, The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
      The absolute maximum ratings of IRL3502SPbF are VGS (Gate-to-Source Voltage)=±10V, ID @ TC= 25°C(Continuous Drain Current, VGS @ 4.5V)=110A, ID @ TC = 100°C (Continuous Drain Current, VGS @ 4.5V )=67A, IDM (Pulsed Drain Current)=420A, EAS (Single Pulse Avalanche Energy)=390mJ, PD (@Tc = 25°C Power Dissipation)=140W, IAR( Avalanche Current)= 14A, EAR (Repetitive Avalanche Energy)=14mJ, dv/dt( Peak Diode Recovery dv/dt) =5.0V/ns, TJ (Operating Junction and)= -55 to + 150°C, TSTG(Storage Temperature Range Soldering Temperature, for 10 seconds )=300 (1.6mm from case )°C, RJC( Junction-to-Case )=0.89°C/W, RJA( Junction-to-Ambient )=40°C/W.






Parameters:

Technical/Catalog InformationIRL3502SPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C110A
Rds On (Max) @ Id, Vgs7 mOhm @ 64A, 7V
Input Capacitance (Ciss) @ Vds 4700pF @ 15V
Power - Max140W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 4.5V
Package / CaseD²Pak, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRL3502SPBF
IRL3502SPBF



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