IRL3502S

MOSFET N-CH 20V 110A D2PAK

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SeekIC No. : 003433404 Detail

IRL3502S: MOSFET N-CH 20V 110A D2PAK

floor Price/Ceiling Price

Part Number:
IRL3502S
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 110A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) @ Vgs: 110nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 4700pF @ 15V
Power - Max: 140W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Current - Continuous Drain (Id) @ 25° C: 110A
Vgs(th) (Max) @ Id: 700mV @ 250µA
Manufacturer: International Rectifier
Power - Max: 140W
Gate Charge (Qg) @ Vgs: 110nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 4700pF @ 15V
Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V


Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, V GS @ 4.5V 110 A
ID @ TC = 100°C Continuous Drain Current, V GS @ 4.5V 67 A
IDM Pulsed Drain Current 420 A
PD @TC = 25°C Power Dissipation 140 W
  Linear Derating Factor 1.1 W/°C
VGS Gate-to-Source Voltage ±10 V
VGSM Gate-to-Source Voltage
(Start Up Transient, tp = 100s)
14 V
EAS Single Pulse Avalanche Energy 390 mJ
IAR Avalanche Current 64 A
EAR Repetitive Avalanche Energy 14 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range
-55 to 150
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)



Description

These HEXFET Power MOSFETs  IRL3502S were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.

The D2Pak IRL3502S is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL3502S provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRL3502S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.




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