IRL3502

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25° C: 110A
Vgs(th) (Max) @ Id: 700mV @ 250µA
Manufacturer: International Rectifier
Power - Max: 140W
Gate Charge (Qg) @ Vgs: 110nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 4700pF @ 15V
Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @5.0V	110
ID @ TC = 100°C	Continuous Drain Current, VGS @5.0V	67	A
IDM	Pulsed Drain Current	420
PD @TC = 25°C	Power Dissipation	140	W
	Linear Derating Factor	1.1	W/°C
VGS	Gate-to-Source Voltage	± 10	V
VGSM	Gate-to-Source Voltage (Start Up Transient, tp = 100s)	14	V
EAS	Single Pulse Avalanche Energy	390	mJ
IAR	Avalanche Current	64	A
EAR	Repetitive Avalanche Energy	14	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

Description

These HEXFET Power MOSFETs IRL3502 were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.

The TO-220 package of IRL3502 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.