IRL3402S

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 700mV @ 250µA
Manufacturer: International Rectifier
Power - Max: 110W
Gate Charge (Qg) @ Vgs: 78nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 85A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 51A, 7V
Input Capacitance (Ciss) @ Vds: 3300pF @ 15V


Features:

These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. TheD2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, V GS @ 4.5V	85	A
ID @ TC = 100°C	Continuous Drain Current, V GS @ 4.5V	54	A
IDM	Pulsed Drain Current	340	A
PD @TC = 25°C	Power Dissipation	110	W
	Linear Derating Factor	0.91	W/°C
VGS	Gate-to-Source Voltage	±10	V
VGSM	Gate-to-Source Voltage (Start Up Transient, tp = 100s)	14	V
EAS	Single Pulse Avalanche Energy	290	mJ
IAR	Avalanche Current	51	A
EAR	Repetitive Avalanche Energy	11	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ,TSTG	Operating Junction Storage Temperature Range	-55 to 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)