IRL3303S

MOSFET N-CH 30V 38A D2PAK

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SeekIC No. : 003433606 Detail

IRL3303S: MOSFET N-CH 30V 38A D2PAK

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Part Number:
IRL3303S
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 38A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 26nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 870pF @ 25V
Power - Max: 3.8W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Series: HEXFET®
Input Capacitance (Ciss) @ Vds: 870pF @ 25V
Gate Charge (Qg) @ Vgs: 26nC @ 4.5V
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Current - Continuous Drain (Id) @ 25° C: 38A
Manufacturer: International Rectifier
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V


Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27
IDM Pulsed Drain Current 140
PD @TC = 25°C Power Dissipation 3.8 W
PD @TC = 25°C

Power Dissipation

68

W

Linear Derating Factor 0.45 W/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy 130 mJ
IAR Avalanche Current 20 A
EAR Repetitive Avalanche Energy 6.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )





Description

Fifth Generation HEXFETs from International Rectifier IRL3303S  utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs IRL3303S  are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRL3303S  is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL3303S  provides thehighest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRL3303S  is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRL3303S ) is available for lowprofile applications






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