MOSFET MOSFT 30V 38A 26mOhm 17.3nC LogLvl
IRL3303LPBF: MOSFET MOSFT 30V 38A 26mOhm 17.3nC LogLvl
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | 16 V | Continuous Drain Current : | 38 A | ||
Resistance Drain-Source RDS (on) : | 40 mOhms | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
The IRL3303LPbF and IRL3303SPbF has 8 features.The first one is logic-level gate drive.The second one is advanced process technology.The third one is surface mount (IRL3303S).The fourth one is low-profile through-hole(IRL3303L).The fifth one is 175 operating temperature.The sixth one is fast switch.The seventh one is fully avalanche rated.The eighth one is lead-free.
Fifth generation HEXFETs from international rectifier IRL3303LPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit,combined with the fast switching speed and ruggedized device IRL3303LPbF design that HEXFET power MOSFETs are well know for,provides the designer with an extremely effcient and reliable device for use in a wide variety of applications.The D Pak IRL3303LPbF is a surface mount power package capable of accommodating die sizes up to HEX-4.The device IRL3303LPbF provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.The D pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.The through-hole version (IRL3303LPbF) is available for lowprofile applications.
The IRL3303LPbF and IRL3303SPbF has some information about absolute maximum ratings.ID @ Tc =25 ,when parameter is continuous drain current,VGS @ 10V,the max is 38,the units is A.ID @ Tc =100 ,when parameter is continuous drain current,VGS @ 10V,the max is 27,the units is A.IDM,when parameter is pulsed drain current,the max is 140,the units is A.PD @ TA = 25,when parameter is power dissipation,the max is 3.8,the units is W.PD @ TA = 25,when parameter is power dissipation,the max is 68,the units is W/.
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