IRL3303D1STRL

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Packaging: Tape & Reel (TR)
Series: HEXFET®
Input Capacitance (Ciss) @ Vds: 870pF @ 25V
Gate Charge (Qg) @ Vgs: 26nC @ 4.5V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Current - Continuous Drain (Id) @ 25° C: 38A
Manufacturer: International Rectifier
Power - Max: 68W
Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V


Parameters:

Technical/Catalog Information	IRL3303D1STRL
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	38A
Rds On (Max) @ Id, Vgs	26 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	870pF @ 25V
Power - Max	68W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	26nC @ 4.5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRL3303D1STRL IRL3303D1STRL