IRL3302S

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Packaging: Tube
Gate Charge (Qg) @ Vgs: 31nC @ 4.5V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25° C: 39A
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 700mV @ 250µA
Manufacturer: International Rectifier
Power - Max: 57W
Input Capacitance (Ciss) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 23A, 7V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @4.5V	39
ID @ TC = 100°C	Continuous Drain Current, VGS @4.5V	25	A
IDM	Pulsed Drain Current	160
PD @TC = 25°C	Power Dissipation	57	W
	Linear Derating Factor	0.45	W/°C
VGS	Gate-to-Source Voltage	± 10	V
EAS	Single Pulse Avalanche Energy	130	mJ
IAR	Avalanche Current	23	A
EAR	Repetitive Avalanche Energy	5.7	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

Description

These HEXFET Power MOSFETs IRL3302S were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.

The D²Pak IRL3302S is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL3302S provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRL3302S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.