IRL3302PBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 39 A
Resistance Drain-Source RDS (on) : 23 mOhms
Gate-Source Breakdown Voltage : 10 V


Features:






Specifications






Description

The IRL3302PbF has 6 features.The first one is advanced process technology.The second one is optimized for 4.5V gate drive.The third one is ideal for CPU core DC-DC converters.The fourth one is 150 operating temperature.The fifth one is Fast Switching.The sixth one is Lead-Free.

These HEXFET Power MOSFETs IRL3302PbF  were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment.Advanced processing techniques combined with an optimized gate oxide design results in a die size specifically to offer maximum cost.

The TO-220 package of IRL3302PbF  is universally preferred for all commerical-industrial applications at power dissipation levels to approximately 50 watts.The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

The IRL3302PbF has some  absolute maximum ratings.ID @ Tc =25 ,when parameter is continuous drain current,VGS @ 10V,the max is 39,the units is A.ID @ Tc =100 ,when parameter is continuous drain current,VGS @ 10V,the max is 25,the units is A.IDM,when parameter is pulsed drain current,the max is 57,the units is A.PD @ TA = 25,when parameter is power dissipation,the max is 57,the units is W.PD @ TA = 25,when parameter is linear derating factor,the max is 0.45,the units is W/.VGS,when parameter is Gate-to-Source Voltage,the max is 14,the units is V.EAS,when parameter is Single Pulse Avalanche Energy,the max is 130,the units is mJ.IAR,when parameter is Avalanche Current,the max is 23,the units is A.EAR,when parameter is Repetitive Avalanche Energy,the max is 5.7,the units is mJ.dv/dt,when parameter is Peak Diode Recovery dv/dt,the max is 5.0,the units is V/ns.TJ and TSTG,when parameter is Operating Junction and Storage Temperature Range,the max is -55 to + 150,the units is °C.
     

Parameters:

Technical/Catalog Information	IRL3302PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	39A
Rds On (Max) @ Id, Vgs	20 mOhm @ 23A, 7V
Input Capacitance (Ciss) @ Vds	1300pF @ 15V
Power - Max	57W
Packaging	Tube
Gate Charge (Qg) @ Vgs	31nC @ 4.5V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRL3302PBF IRL3302PBF