Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 39 A
Resistance Drain-Source RDS (on)
: 23 mOhms
Gate-Source Breakdown Voltage
: 10 V
Features: SpecificationsDescriptionThe IRL3302PbF has 6 features.The first one is advanced process technology.The second one is optimized for 4.5V gate drive.The third one is ideal for CPU core DC-DC converters.The fourth one is 150 operating temperature.The fifth one is Fast Switching.The sixth one is Lead-Free.
These HEXFET Power MOSFETs IRL3302PbF were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment.Advanced processing techniques combined with an optimized gate oxide design results in a die size specifically to offer maximum cost.
The TO-220 package of IRL3302PbF is universally preferred for all commerical-industrial applications at power dissipation levels to approximately 50 watts.The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The IRL3302PbF has some absolute maximum ratings.ID @ Tc =25 ,when parameter is continuous drain current,VGS @ 10V,the max is 39,the units is A.ID @ Tc =100 ,when parameter is continuous drain current,VGS @ 10V,the max is 25,the units is A.IDM,when parameter is pulsed drain current,the max is 57,the units is A.PD @ TA = 25,when parameter is power dissipation,the max is 57,the units is W.PD @ TA = 25,when parameter is linear derating factor,the max is 0.45,the units is W/.VGS,when parameter is Gate-to-Source Voltage,the max is 14,the units is V.EAS,when parameter is Single Pulse Avalanche Energy,the max is 130,the units is mJ.IAR,when parameter is Avalanche Current,the max is 23,the units is A.EAR,when parameter is Repetitive Avalanche Energy,the max is 5.7,the units is mJ.dv/dt,when parameter is Peak Diode Recovery dv/dt,the max is 5.0,the units is V/ns.TJ and TSTG,when parameter is Operating Junction and Storage Temperature Range,the max is -55 to + 150,the units is °C.
Parameters: | Technical/Catalog Information | IRL3302PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 39A |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 23A, 7V |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 15V |
| Power - Max | 57W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 31nC @ 4.5V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRL3302PBF
IRL3302PBF
|
IRL3302PBF Data Sheet
