IRL3215

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 12A
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Drain to Source Voltage (Vdss): 150V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 35nC @ 5V
Manufacturer: International Rectifier
Power - Max: 80W
Rds On (Max) @ Id, Vgs: 166 mOhm @ 7.2A, 10V
Input Capacitance (Ciss) @ Vds: 775pF @ 25V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @10V	12
ID @ TC = 100°C	Continuous Drain Current, VGS @10V	8.5	A
IDM	Pulsed Drain Current	48
PD @TC = 25°C	Power Dissipation	80	W
	Linear Derating Factor	0.53	W/°C
VGS	Gate-to-Source Voltage	± 16	V
EAS	Single Pulse Avalanche Energy	130	mJ
IAR	Avalanche Current	7.2	A
EAR	Repetitive Avalanche Energy	8.0	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFETs from International Rectifier IRL3215 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs IRL3215 are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package of IRL3215 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.