IRL3202PBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 19 mOhms
Continuous Drain Current : 48 A
Gate-Source Breakdown Voltage : 10 V


Features:






Specifications






Description

The IRL3202PbF has 5 features.The first one is advanced process technology.The second one is optimized for 4.5V-7.0V Gate drive.The third one is ideal for CPU core DC-DC converters.The fourth one is Fast Switching.The fifth one is Lead-Free.

These  HEXFET Power MOSFETs IRL3202PbF are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.The D-PAK IRL3202PbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

The TO-220 package of IRL3202PbF is universally preferred for all commercial-industrial applications at power dissipation levels to applications at power dissipation levels to approximately 50 watts.The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughput the industry. 

The IRL3202PbF has some  absolute maximum ratings.ID @ Tc =25 ,when parameter is continuous drain current,VGS @ 4.5V,the max is 48,the units is A.ID @ Tc =100 ,when parameter is continuous drain current,VGS @ 4.5V,the max is 30,the units is A.IDM,when parameter is pulsed drain current,the max is 190,the units is A.PD @ TA = 25,when parameter is power dissipation,the max is 69,the units is W.When parameter is linear derating factor,the max is 0.56,the units is W/.VGS,when parameter is Gate-to-Source Voltage,the max is ±10,the units is V.EAS,when parameter is Single Pulse Avalanche Energy,the max is 270,the units is mJ.IAR,when parameter is Avalanche Current,the max is 29,the units is A.EAR,when parameter is Repetitive Avalanche Energy,the max is 6.9,the units is mJ.dv/dt,when parameter is Peak Diode Recovery dv/dt,the max is 5.0,the units is V/ns.TJ and TSTG,when parameter is Operating Junction and Storage Temperature Range,the max is -55 to + 150,the units is °C.