MOSFET N-CH 20V 48A TO-220AB
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Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @4.5V |
48 |
|
ID @ TC = 100°C | Continuous Drain Current, VGS @4.5V |
30 |
A |
IDM | Pulsed Drain Current |
190 |
|
PD @TC = 25°C | Power Dissipation |
69 |
W |
Linear Derating Factor |
0.56 |
W/°C | |
VGS | Gate-to-Source Voltage |
± 10 |
V |
VGSM | Gate-to-Source Voltage (Start Up Transient, tp = 100s) |
14 |
V |
EAS | Single Pulse Avalanche Energy |
270 |
mJ |
IAR | Avalanche Current |
29 |
A |
EAR | Repetitive Avalanche Energy |
6.9 |
mJ |
dv/dt | Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
Mounting torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
These HEXFET Power MOSFETs IRL3202 were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide IRL3202 design results in a die sized specifically to offer maximum efficiency at minimum cost.
The TO-220 package of IRL3202 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO- 220 contribute to its wide acceptance throughout the industry.
Technical/Catalog Information | IRL3202 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 48A |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 29A, 7V |
Input Capacitance (Ciss) @ Vds | 2000pF @ 15V |
Power - Max | 69W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 43nC @ 4.5V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRL3202 IRL3202 |