IRL3103S

MOSFET N-CH 30V 64A D2PAK

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SeekIC No. : 003433418 Detail

IRL3103S: MOSFET N-CH 30V 64A D2PAK

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Part Number:
IRL3103S
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 64A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 33nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1650pF @ 25V
Power - Max: 94W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 64A
Gate Charge (Qg) @ Vgs: 33nC @ 4.5V
Power - Max: 94W
Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V
Input Capacitance (Ciss) @ Vds: 1650pF @ 25V


Features:

· Advanced Process Technology
· Surface Mount (IRL3103S)
· Low-profile through-hole (IRL3103L)
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A
IDM Pulsed Drain Current 220 A
PD @TC = 25°C Power Dissipation 94 W
  Linear Derating Factor 0.63 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 240 mJ
IAR Avalanche Current 34 A
EAR Repetitive Avalanche Energy 22 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case) °C



Description

Advanced HEXFET® Power MOSFETs from International Rectifier IRL3103S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3103S design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRL3103S is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL3103S provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRL3103S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRL3103S) is available for lowprofile applications.




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