IRL3103LPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Resistance Drain-Source RDS (on) : 16 mOhms
Gate-Source Breakdown Voltage : 16 V
Package / Case : TO-262
Continuous Drain Current : 64 A


Features:

` Advanced Process Technology
` Surface Mount (IRL3103S)
` Low-profile through-hole (IRL3103L)
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V(Silicon Limited)	64	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V(See Fig. 9)	45
IDM	Pulsed Drain Current	220
PD @ TC = 25	Power Dissipation	94	W
	Linear Derating Factor	0.63	W/
VGS	Gate-to-Source Voltage	±16	V
IAR	Avalanche Current	34	A
EAR	Repetitive Avalanche Energy	22	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6 mm from case)
	Mounting torque, 6-32 or M3 screw	10 lbf`in (1`1N?m)

Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
I_SD 34A, di/dt 120A/s, V_DD V_(BR)DSS,T_J 175


Description

Advanced HEXFET^® Power MOSFETs from International Rectifier IRL3103LPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3103LPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D²Pak IRL3103LPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL3103LPbF provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D²Pak IRL3103LPbF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRL3103LPbF) is available for lowprofile applications.

Parameters:

Technical/Catalog Information	IRL3103LPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	64A
Rds On (Max) @ Id, Vgs	12 mOhm @ 34A, 10V
Input Capacitance (Ciss) @ Vds	1650pF @ 25V
Power - Max	94W
Packaging	Tube
Gate Charge (Qg) @ Vgs	33nC @ 4.5V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRL3103LPBF IRL3103LPBF