IRL3103D2PBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2W
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 44nC @ 4.5V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 54A
Series: FETKY™
Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds: 2300pF @ 25V


Features:






Specifications






Description

The IRL3103D2PbF has the following features including Copackaged HEXFE Power MOSFET and Schottky Diode;Generation 5 Technology;Logic Level Gate Drive;Minimize Circuit Inductance;Ideal For Synchronous Regulator Application;Lead-Free.

The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes IRL3103D2PbF offer the designer an innovative board space saving solution for switching regulator applications.  A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and  minimized  component  interconnect inductance and  resistance result in  maximized converter efficiencies.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss.

The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.