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IRL3103D2

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @10V (Silicon Limited) 54 ID @ TC = 100°C Continuous Drain Current, VGS @10V 34 A IDM Pulsed Drain Current 220 PD @TA = 25°C Power Dissipation 2.0 PD @TC = 25...

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IRL3103D2: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @10V (Silicon Limited) 54 ID @ TC = 100°C Continuous Drain Current, VGS @10V 34 A...

IRL3103D2 Data Sheet

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Part Number:
IRL3103D2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

 Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @10V (Silicon Limited)
54
ID @ TC = 100°C Continuous Drain Current, VGS @10V
34
A
IDM Pulsed Drain Current
220
PD @TA = 25°C  Power Dissipation

2.0

  
PD @TC = 25°C Power Dissipation
70
W

 Linear Derating Factor
0.56
W/°C
VGS Gate-to-Source Voltage
±16
V
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
°C

 Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)



Description

The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes IRL3103D2 offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies.

The TO-220 package of IRL3103D2 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




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