IRL3103D1

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2W
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Input Capacitance (Ciss) @ Vds: 1900pF @ 25V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 64A
Series: FETKY™
Gate Charge (Qg) @ Vgs: 43nC @ 4.5V
Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @10V	64
ID @ TC = 100°C	Continuous Drain Current, VGS @10V	45	A
IDM	Pulsed Drain Current	220
PD @TA = 25°C	Power Dissipation	2.0
PD @TC = 25°C	Power Dissipation	89	W
	Linear Derating Factor	0.56	W/°C
VGS	Gate-to-Source Voltage	±16	V
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

Description

The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes IRL3103D1 offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies.

The TO-220 package of IRL3103D1 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.