IRL1404ZS

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 40V
Series: HEXFET®
Packaging: Tube
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) @ Vgs: 110nC @ 5V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Power - Max: 230W
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds: 5080pF @ 25V


Features:






Specifications






Description

      The IRL1404ZS has the following features including Logic Level;Advanced Process Technology;Ultra Low On-Resistance;175°C Operating Temperature;Fast Switching;Repetitive Avalanche Allowed up to Tjmax.
      Specifically designed for Automotive applications of IRL1404ZS,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications  and a wide variety of other applications. Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11);Limited by TJmax, starting TJ = 25°C,L = 0.079mH, RG = 25, IAS = 75A, VGS =10V.Part not recommended for use above this value.;Pulse width 1.0ms; duty cycle 2%.;Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
      Stresses beyond those listed under Absolute Maximum Ratings of IRL1404ZS may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. The LH1500 is robust, ideal for telecom and ground fault applications. It is a SPST normally open switch (1 Form A) that replaces electromechanical relays in many applications. It is constructed using a GaAIAs LED for actuation control and an integrated monolithic die for the switch output. The die, fabricated in a high-voltage dielectrically isolated technology, is comprised of a photodiode array, switch control circuitry and MOSFET switches. In addition, it employs current-limiting cir- cuitry which meets FCC 68.302 and other regulatory voltage surge requirements when overvoltage protec- tion is provided.
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