Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Package / Case
: D2PAK
Drain-Source Breakdown Voltage
: 40 V
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 160 A
Resistance Drain-Source RDS (on)
: 4 m Ohms
Features: `Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperature
`Fast Switching
`Fully Avalanche Rated
`Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
160 |
A |
| ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V |
110 |
| IDM |
Pulsed Drain Current |
640 |
| PD @ TA = 25 |
Power Dissipation |
3.8 |
W |
| PD @ TC = 25 |
Power Dissipation |
200 |
W |
| |
Linear Derating Factor |
1.3 |
W/ |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| EAS |
Single Pulse Avalanche Energy |
520 |
mJ |
| IAR |
Avalanche Current |
95 |
A |
| EAR |
Repetitive Avalanche Energy |
20 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to 175 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6 mm from case) |
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25, L = 0.35mH RG = 25, IAS = 95A. (See Figure 12)
ISD 95A, di/dt 160A/s, VDD V(BR)DSS, TJ 175
Calculated continuous current based on maximum allowable junction temperature; for recommended current-handing of the package refer to Design Tip # 93-4.Description
Seventh Generation HEXFET® power MOSFETs from International Rectifier IRL1404SPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL1404SPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak IRL1404SPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL1404SPbF provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRL1404SPbF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1404L) is available for low.
Parameters: | Technical/Catalog Information | IRL1404SPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 160A |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 95A, 10V |
| Input Capacitance (Ciss) @ Vds | 6600pF @ 25V |
| Power - Max | 3.8W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 140nC @ 5V |
| Package / Case | D²Pak, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRL1404SPBF
IRL1404SPBF
|
IRL1404SPBF Data Sheet
