IRL1404S

MOSFET N-CH 40V 160A D2PAK

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SeekIC No. : 003433592 Detail

IRL1404S: MOSFET N-CH 40V 160A D2PAK

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Part Number:
IRL1404S
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 40V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 160A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 140nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 6600pF @ 25V
Power - Max: 200W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Power - Max: 200W
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 160A
Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
Gate Charge (Qg) @ Vgs: 140nC @ 5V
Input Capacitance (Ciss) @ Vds: 6600pF @ 25V


Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 160 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 110 A
IDM Pulsed Drain Current 640 A
PD @ TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W
  Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 520 mJ
IAR Avalanche Current 95 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range
-55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)



Description

Seventh Generation HEXFET® power MOSFETs from International Rectifier IRL1404S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRL1404S is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL1404S provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRL1404S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL1404L) is available for lowprofile applications




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