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IRHE93110

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC=25 Continuous Drain Curr...

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IRHE93110: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mount· Light WeightS...

IRHE93110 Data Sheet

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Part Number:
IRHE93110
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Surface Mount
· Light Weight


Specifications

 

Parameter

 

Units

ID @ VGS = -12V, TC=25

Continuous Drain Current

-2.3

A

ID @ VGS = -12V, TC=100

Continuous Drain Current

-1.5

IDM

Pulsed Drain Current

-9.2

PD @ TC = 25

Max. Power Dissipation

15

W

 

Linear Derating Factor

0.1

W/

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

75

mJ

IAR

Avalanche Current

-2.3

A

EAR

Repetitive Avalanche Energy

1.5

mJ

dv/dt

Peak Diode Recovery dv/dt

-12.5

V/ns

TJ
TSTG

Operating Junction
Storage Temperature Range

-55 to 150

 

Pckg. Mounting Surface Temp.

300 (for 5s)

 

Weight

0.42 (Typical)

g


Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -25V, starting TJ = 25, L= 28mH Peak IL = -2.3A, VGS = -12V
ISD -2.3A, di/dt -540A/µs, VDD -100V, TJ 150


Description

International Rectifier's RAD-HardTM HEXFET® technology IRHE93110 provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices IRHE93110 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHE93110 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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