IRHE93110 Selling Leads, Price trend, IRHE93110 DataSheet download, circuit diagram from SeekIC.com

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC=25 Continuous Drain Curr...

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SeekIC No. : 004377959 Detail

IRHE93110: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mount· Light WeightS...

IRHE93110 Data Sheet

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Part Number:: IRHE93110
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/12/21

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Product Details

Description

Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Surface Mount
· Light Weight

Specifications

	Parameter		Units
I_D @ V_GS = -12V, T_C=25	Continuous Drain Current	-2.3	A
I_D @ V_GS = -12V, T_C=100	Continuous Drain Current	-1.5
I_DM	Pulsed Drain Current	-9.2
P_D @ T_C = 25	Max. Power Dissipation	15	W
	Linear Derating Factor	0.1	W/
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	75	mJ
I_AR	Avalanche Current	-2.3	A
E_AR	Repetitive Avalanche Energy	1.5	mJ
dv/dt	Peak Diode Recovery dv/dt	-12.5	V/ns
T_J T_STG	Operating Junction Storage Temperature Range	-55 to 150
	Pckg. Mounting Surface Temp.	300 (for 5s)
	Weight	0.42 (Typical)	g

Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
V_DD = -25V, starting T_J = 25, L= 28mH Peak I_L = -2.3A, V_GS = -12V
I_SD -2.3A, di/dt -540A/µs, V_DD -100V, T_J 150

Description

International Rectifier's RAD-HardTM HEXFET^® technology IRHE93110 provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices IRHE93110 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHE93110 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

IRHE93110

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