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IRHE57133SE

Features: ·Single Event Effect (SEE) Hardened·Ultra Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drai...

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SeekIC No. : 004377951 Detail

IRHE57133SE: Features: ·Single Event Effect (SEE) Hardened·Ultra Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·...

IRHE57133SE Data Sheet

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Part Number:
IRHE57133SE
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/16

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Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Ultra Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Ceramic Package
·Light Weight


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25°C
 Continuous Drain Current
9.0
A
ID @ VGS = 12V, TC = 100°C
 Continuous Drain Current
5.7
IDM
 Pulsed Drain Current
36
PD @ TC = 25°C
 Max. Power Dissipation
25
W
 Linear Derating Factor
0.2
W/°C
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
56
mJ
IAR
 Avalanche Current
9.0
A
EAR
 Repetitive Avalanche Energy
2.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
6.6
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
  Pckg. Mounting Surface Temp.
300 (for 5s)
  Weight
0.42 (Typical)
g
For footnotes refer to the last page


Description

International Rectifier's R5TM technology IRHE57133SE provides high performance power MOSFETs for space applications. The IRHE57133SE has been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. The IRHE57133SE retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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