IRH9230

International Rectifier's P-Channel RAD HARD technology HEXFETs IRH9230 demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 10⁵ Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices IRH9230 are also capable of surviving transient ionization pulses as high as 1 x 10¹² Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs hasdemonstrated virtual immunity to SEE failure. Since the PChannel RAD HARD process IRH9230 utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.

P-Channel RAD HARD HEXFET transistors IRH9230 also feature all of the well-established advantages of MOSFETs, such as voltage control,very fast switching, ease of paralleling and temperature stability of the electrical parameters.

They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.