Position: Home  > All Categories> Integrated Circuits (ICs) > IRH9130

IRH9130

Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Package·Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain Current -11 A ID ...

product image

IRH9130 Picture
See larger image
SeekIC No. : 004377946 Detail

IRH9130: Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Package·Light WeightSpecific...

IRH9130 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRH9130
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Package
·Light Weight


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25 Continuous Drain Current -11 A
ID @ VGS = 12V, TC = 100 Continuous Drain Current -7.0
IDM Pulsed Drain Current -44
PD @ TC = 25 Max. Power Dissipation 75 W
  Linear Derating Factor 0.6 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 190 mJ
IAR Avalanche Current -11 A
EAR Repetitive Avalanche Energy 7.5 mJ
dv/dt Peak Diode Recovery dv/dt -10 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150
  Lead Temperature 300 (0.063 in./1.6mm from case for 10s)
  Weight 11.5 (Typical) g



Description

International Rectifier's RADHard HEXFET® technology IRH9130 provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices IRH9130 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRH9130 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Optical Inspection Equipment
AA924
A21K4B
Integrated Circuits (ICs)
TA8435H
1MB12-140
Crystals and Oscillators
WT325BI0030.000000
2SB49
Optoelectronics
SFH7770
TLP423J
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
View more