Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10µs Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature Coefficient.Specifications Parameter Max...
IRGSL6B60KD: Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10µs Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Charac...
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
Parameter |
Max. |
Units | |
VCES | Collector-to-Emitter Voltage |
600 |
V |
ID @ TC = 25°C | Continuous Collector Current |
13 |
A |
ID @ TC = 100°C | Continuous Collector Current |
7.0 | |
ICM | Pulsed Collector Current |
26 | |
ILM | Clamped Inductive Load Current |
26 | |
IF @ TC = 25°C | Diode Continuous Forward Current |
13 | |
IF @ TC = 100°C | Diode Continuous Forward Current |
7.0 | |
IFM | Diode Maximum Forward Current |
26 | |
VGE | Gate-to-Emitter Voltage |
± 20 |
V |
PD @TC = 25°C | Max. Power Dissipation |
90 |
W |
PD @ TC = 100°C | Maximum Power Dissipation |
36 | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C |
Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) |