IGBT Transistors
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 2.2 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Continuous Collector Current at 25 C : | 22 A | Power Dissipation : | 104 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | D2PAK |
Packaging : | Tube |
Parameter |
Max. |
Units | |
VCES |
Collector-to-Emitter Voltage |
600 |
|
IC @ TC = 25 |
Continuous Collector Current |
22 |
A |
IC @ TC = 100 |
Continuous Collector Current |
12 | |
ICM |
Pulse Collector Current (Ref. Fig. C.T.4) |
44 | |
ILM |
Clamped Inductive Load Current |
44 | |
IF @ TC = 25 |
Diode Continous Forward Current |
22 | |
IF @ TC = 100 |
Diode Continous Forward Current |
10 | |
IFRM |
Maximum Repetitive Forward Current |
44 | |
VGE |
Gate-to-Emitter Voltage |
±20 |
V |
PD @ TC = 25 |
Maximum Power Dissipation |
156 |
W |
PD @ TC = 100 |
Maximum Power Dissipation |
62 | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 |
|
Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) |
Technical/Catalog Information | IRGS10B60KDPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 22A |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 10A |
Power - Max | 156W |
Mounting Type | Surface Mount |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRGS10B60KDPBF IRGS10B60KDPBF |