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IRGSL6B60K

Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10µs Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.Specifications SYMBOL PARAMETER Value UNIT VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Co...

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SeekIC No. : 004377932 Detail

IRGSL6B60K: Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10µs Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.Specifications ...

IRGSL6B60K Data Sheet

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Part Number:
IRGSL6B60K
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.


Specifications

SYMBOL PARAMETER Value UNIT
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 13 A
IC @ TC = 100°C Continuous Collector Current 7.0
ICM Pulsed Collector Current 26
ILM Clamped Inductive Load Current  26
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 90 W
PD @ TC = 100°C Maximum Power Dissipation 36
TJ Operating Junction and -55 to +150 °C
TSTG Storage Temperature Range
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)



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