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IRGSL4B60KD1

Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10µs Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.• Maximum Junction Temperature rated at 175°C.Specifications Parameter Max. Units VCES Collector-to...

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IRGSL4B60KD1: Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10µs Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.• Maximum Ju...

IRGSL4B60KD1 Data Sheet

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Part Number:
IRGSL4B60KD1
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.


Specifications

  Parameter Max. Units
VCES
 Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 11 A
IC @ TC = 100°C Continuous Collector Current 7.6
ICM Pulse Collector Current (Ref.Fig.C.T.5) 22
ILM Clamped Inductive Load current 22
IF @ TC = 25°C Diode Continuous Forward Current 11
IF @ TC = 100°C Diode Continuous Forward Current 6.7
IFM Diode Continuous Forward Current 22
VGE
 Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 63 W
PD @ TC = 100°C Maximum Power Dissipation 31
TJ
TSTG		 Operating Junction and
Storage Temperature Range 		-55 to +175 °C
  Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)



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