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IRGSL30B60K

Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10µs Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.• Maximum Junction Temperature rated at 175°C.Specifications Parameter Max. Units VCES Collector-t...

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SeekIC No. : 004377930 Detail

IRGSL30B60K: Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10µs Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.• Maximum Ju...

IRGSL30B60K Data Sheet

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Part Number:
IRGSL30B60K
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.


Specifications

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 78 A
IC @ TC = 100°C Continuous Collector Current 50
ICM Pulse Collector Current(Ref.Fig.C.T.5) 120
ILM Clamped Inductive Load current 120
VISOL RMS Isolation Voltage, Terminal to Case, t=1 min. 2500 V
VGE Gate-to-Emitter Voltage ±20
PD @ TC = 25°C Maximum Power Dissipation 370 W
PD @ TC = 100°C Maximum Power Dissipation 180
TJ
TSTG		 Operating Junction and Storage Temperature Range -55 to +175 °C
  Soldering Temperature, for 10 sec. 300(0.063 in.(1.6mm)fromcase)
  Mounting Torque, 6-32 or M3 Screw 10 lbf`in (1.1 N`m)  



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