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IRGSL15B60KDPbF

Features: • Low VCE (on) Non Punch Through IGBTTechnology.• Low Diode VF.• 10s Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature Coefficient.• Lead-FreeSpecifications Parameter...

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SeekIC No. : 004377929 Detail

IRGSL15B60KDPbF: Features: • Low VCE (on) Non Punch Through IGBTTechnology.• Low Diode VF.• 10s Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristic...

IRGSL15B60KDPbF Data Sheet

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Part Number:
IRGSL15B60KDPbF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/16

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Product Details

Description



Features:

• Low VCE (on) Non Punch Through IGBT
Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free


Specifications

Parameter
Max.
Units
VCES
 Collector-to-Emitter Voltage
600
V
IC @ TC = 25
 Continuous Collector Current
31
A
IC @ TC = 100
 Continuous Collector Current
15
ICM
 Pulse Collector Current
62
ILM
 Clamped Inductive Load Current
62
IF @ TC = 25
 Diode Continous Forward Current
31
IF @ TC = 100
 Diode Continous Forward Current
15
IFRM
 Diode Maximum Forward Current
64
VGE
 Gate-to-Emitter Voltage
±20
V
PD @ TC = 25
 Maximum Power Dissipation
208
W
PD @ TC = 100
 Maximum Power Dissipation
83
TJ
TSTG
 Operating Junction and
Storage Temperature Range
-55 to +150
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)



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