IGBT Transistors 430V Low-Vceon
IRGSL14C40LPBF: IGBT Transistors 430V Low-Vceon
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 430 V | ||
Collector-Emitter Saturation Voltage : | 1.4 V | Maximum Gate Emitter Voltage : | 10 V | ||
Continuous Collector Current at 25 C : | 20 A | Power Dissipation : | 125 W | ||
Package / Case : | TO-262 | Packaging : | Tube |
Technical/Catalog Information | IRGSL14C40LPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Input Type | Logic |
Voltage - Collector Emitter Breakdown (Max) | 430V |
Current - Collector (Ic) (Max) | 20A |
Vce(on) (Max) @ Vge, Ic | 1.75V @ 5V, 14A |
Power - Max | 125W |
Mounting Type | Through Hole |
Package / Case | TO-262AA |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRGSL14C40LPBF IRGSL14C40LPBF |