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IRGSL10B60KD

Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10µs Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature Coefficient.Application• Benchmark Efficiency ...

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SeekIC No. : 004377927 Detail

IRGSL10B60KD: Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10µs Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Charac...

IRGSL10B60KD Data Sheet

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Part Number:
IRGSL10B60KD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:


• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.


Application

• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.


Specifications

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IF@ TC= 25° CContinuous Collector Current 22 A
IF@ TC= 100° CContinuous Collector Current 12 A
ICM Pulsed Collector Current 44 A
ICM Clamped Inductive Load Current 44 A
IF@ TC= 25° CDiode Continuous Forward Current 22 A
IF@ TC= 100° CDiode Continuous Forward Current 10 A
LSM Diode Maximum Forward Current 44 A
VGE Gate-to-Emitter Voltage ± 20 V
PD@ TC= 25° CMaximum Power Dissipation 156 W
PD@ TC= 100° CMaximum Power Dissipation 62 W
TJ
TSTG

Operating Junction and

Storage Temperature Range

 -55 to +150 °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)



Description

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

IRGSL10B60KD




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