Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10µs Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.Specifications SYMBOL PARAMETER Value UNIT VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Co...
IRGS6B60K: Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10µs Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.Specifications ...
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
SYMBOL | PARAMETER | Value | UNIT |
VCES | Collector-to-Emitter Voltage | 600 | V |
IC @ TC = 25°C | Continuous Collector Current | 13 | A |
IC @ TC = 100°C | Continuous Collector Current | 7.0 | |
ICM | Pulsed Collector Current | 26 | |
ILM | Clamped Inductive Load Current | 26 | |
VGE | Gate-to-Emitter Voltage | ± 20 | V |
PD @ TC = 25°C | Maximum Power Dissipation | 90 | W |
PD @ TC = 100°C | Maximum Power Dissipation | 36 | |
TJ | Operating Junction and | -55 to +150 | °C |
TSTG | Storage Temperature Range | ||
Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) |