Features: ·Advanced Trench IGBT Technology ·Optimized for Sustain and Energy Recovery Circuits in PDP Applications·TM Low VCE(on) and Energy per Pulse (EPULSE) for Improved Panel Efficiency ·High Repetitive Peak Current Capability ·Lead Free PackageSpecifications Symbol Parameter Max. ...
IRGP4085DPbF: Features: ·Advanced Trench IGBT Technology ·Optimized for Sustain and Energy Recovery Circuits in PDP Applications·TM Low VCE(on) and Energy per Pulse (EPULSE) for Improved Panel Efficiency ·High Re...
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IGBT Transistors 600V UltraFast Trnch w/Ultra-Low VF Diode
Features: ·Advanced Trench IGBT Technology ·Optimized for Sustain and Energy Recoverycircuits in P...
Symbol |
Parameter |
Max. |
Units |
VGE | Drain-Source Voltage |
±30 |
V |
IC @ TC =25 | Continuous Drain Current,VGE @ 15V |
70 |
A |
IC @ TC =100 | Continuous Drain Current,VGE @ 15V |
40 | |
IRP @ TC =25 | Pulsed Drain Current |
250 | |
PD @TC=25 | Maximum Power Dissipation |
160 |
W |
PD @TC=100 | Maximum Power Dissipation |
63 |
W |
Linear Derating Factor |
1.3 |
W/ | |
TJ,TSTG | Operating Junction and Storage Temperature Range |
-40 to+150 |
|
Soldering Temperature for 10 seconds |
300 |
||
Mounting Torque, 6-32 or M3 Screw |
10lb in (1.1N m) |
N |
Parameter |
Typ. |
Max. |
Units | |
RJC (IGBT) RJC(Diode) RCS RJA |
Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) |
- 1.6 0.24 - |
0.80 2.4 - 40 |
/W |
Weight |
6.0 (0.21) |
- |
g(oz) |
This IGBT IRGP4085DPbF is specifically designed for applications in Plasma Display Panels. The IRGP4085DPbF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150!aC operating junction temperature and high repetitive peak curren capability. The IRGP4085DPbF features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.