IRGP4085DPbF

Features: ·Advanced Trench IGBT Technology ·Optimized for Sustain and Energy Recovery Circuits in PDP Applications·TM Low VCE(on) and Energy per Pulse (EPULSE) for Improved Panel Efficiency ·High Repetitive Peak Current Capability ·Lead Free PackageSpecifications Symbol Parameter Max. ...

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IRGP4085DPbF Picture
SeekIC No. : 004377859 Detail

IRGP4085DPbF: Features: ·Advanced Trench IGBT Technology ·Optimized for Sustain and Energy Recovery Circuits in PDP Applications·TM Low VCE(on) and Energy per Pulse (EPULSE) for Improved Panel Efficiency ·High Re...

floor Price/Ceiling Price

Part Number:
IRGP4085DPbF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/8

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Product Details

Description



Features:

·Advanced Trench IGBT Technology
·Optimized for Sustain and Energy Recovery Circuits in PDP Applications
·TM Low VCE(on) and Energy per Pulse (EPULSE) for Improved Panel Efficiency
·High Repetitive Peak Current Capability
·Lead Free Package



Specifications

Symbol
Parameter
Max.
Units
VGE Drain-Source Voltage
±30
V
IC @ TC =25 Continuous Drain Current,VGE @ 15V
70
A
IC @ TC =100 Continuous Drain Current,VGE @ 15V
40
IRP @ TC =25 Pulsed Drain Current
250
PD @TC=25 Maximum Power Dissipation
160
W
PD @TC=100 Maximum Power Dissipation
63
W
Linear Derating Factor
1.3
W/
TJ,TSTG Operating Junction and Storage Temperature
Range
-40 to+150
Soldering Temperature for 10 seconds
300
Mounting Torque, 6-32 or M3 Screw
10lb in (1.1N m)
N
  Parameter
Typ.
Max.
Units
RJC (IGBT)
RJC(Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)

-
1.6
0.24
-
0.80
2.4
-
40
/W
  Weight
6.0 (0.21)
-
g(oz)



Description

This IGBT IRGP4085DPbF is specifically designed for applications in Plasma Display Panels. The IRGP4085DPbF utilizes advanced trench IGBT technology to achieve low VCE(on)  and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150!aC operating junction temperature and high repetitive peak curren capability. The IRGP4085DPbF features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.




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