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IRGMC50U

Features: • Electrically Isolated and Hermetically Sealed• Simple Drive Requirements• Latch-proof• Fast Speed operation >10 kHz• Switching-loss rating includes all tail lossesSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage ...

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SeekIC No. : 004377848 Detail

IRGMC50U: Features: • Electrically Isolated and Hermetically Sealed• Simple Drive Requirements• Latch-proof• Fast Speed operation >10 kHz• Switching-loss rating includes all tai...

IRGMC50U Data Sheet

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Part Number:
IRGMC50U
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed operation >10 kHz
• Switching-loss rating includes all "tail" losses


Specifications

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C Continuous Collector Current
35*
A
IC @ TC = 100°C Continuous Collector Current
20
ICM Pulsed Collector Current
160
ILM Clamped Inductive Load Current
160
VGE Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C Maximum Power Dissipation
150
W
PD @ TC = 100°C Maximum Power Dissipation
60
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C
  Lead Temperature
300 (0.063 in. (1.6mm) from case)
  Weight
9.3 (typical)
g
*Current is limited by pin diameter


Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGMC50U have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.The IRGMC50U provides substantial benefits to a host of high-voltage, high-current applications.

The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "),as well as an indication of the current handling capability of the device




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