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IRGMH40F

Features: • Electrically Isolated and Hermetically Sealed• Simple Drive Requirements• Latch-proof• Fast Speed operation 3 kHz - 8 kHz• High operating frequency• Switching-loss rating includes all tail lossesSpecifications Parameter Max. Units ...

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SeekIC No. : 004377849 Detail

IRGMH40F: Features: • Electrically Isolated and Hermetically Sealed• Simple Drive Requirements• Latch-proof• Fast Speed operation 3 kHz - 8 kHz• High operating frequency• S...

IRGMH40F Data Sheet

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Part Number:
IRGMH40F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed operation 3 kHz - 8 kHz
• High operating frequency
• Switching-loss rating includes all "tail" losses


Specifications

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
1200
V
IC @ TC = 25°C Continuous Collector Current
13
A
IC @ TC = 100°C Continuous Collector Current
48
ICM Pulsed Collector Current
24
ILM Clamped Inductive Load Current
48
VGE Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C Maximum Power Dissipation
96
W
PD @ TC = 100°C Maximum Power Dissipation
96
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C
  Lead Temperature
300 (0.063 in. (1.6mm) from case)
  Weight
9.3 (typical)
g



Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGMH40F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.The IRGMH40F provides substantial benefits to a host of high-voltage, high-current applications.

The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "),as well as an indication of the current handling capability of the device.




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