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IRGMC40U

Features: • Electrically Isolated and Hermetically Sealed• Simple Drive Requirements• Latch-proof• Fast Speed operation >10 kHz• Switching-loss rating includes all tail lossesSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage ...

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SeekIC No. : 004377846 Detail

IRGMC40U: Features: • Electrically Isolated and Hermetically Sealed• Simple Drive Requirements• Latch-proof• Fast Speed operation >10 kHz• Switching-loss rating includes all tai...

IRGMC40U Data Sheet

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Part Number:
IRGMC40U
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed operation >10 kHz
• Switching-loss rating includes all "tail" losses


Specifications

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C Continuous Collector Current
35*
A
IC @ TC = 100°C Continuous Collector Current
20
ICM Pulsed Collector Current
152
ILM Clamped Inductive Load Current
152
VGE Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C Maximum Power Dissipation
125
W
PD @ TC = 100°C Maximum Power Dissipation
50
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C
  Lead Temperature
300 (0.063 in. (1.6mm) from case)
  Weight
9.3 (typical)
g
*Current is limited by pin diameter
Thermal Resistance
 
Parameter
Typ.
Max.
Units
RJC Junction-to-Case
-
1.0
°C/W
RCS Case-to-Sink
0.21
-
RJA Junction-to-Ambient
-
48



Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGMC40U have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.The IRGMC40U provides substantial benefits to a host of high-voltage, high-current applications.

The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "),as well as an indication of the current handling capability of the  device.




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