Position: Home  > All Categories> Integrated Circuits (ICs) > IRGIH50F

IRGIH50F

Features: • Electrically Isolated and Hermetically Sealed• Simple Drive Requirements• Latch-proof• Fast Speed operation 3 kHz - 8 kHz• High operating frequency• Switching-loss rating includes all tail lossesSpecifications Parameter Max. Unit ...

product image

IRGIH50F Picture
See larger image
SeekIC No. : 004377842 Detail

IRGIH50F: Features: • Electrically Isolated and Hermetically Sealed• Simple Drive Requirements• Latch-proof• Fast Speed operation 3 kHz - 8 kHz• High operating frequency• S...

IRGIH50F Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRGIH50F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed operation 3 kHz - 8 kHz
• High operating frequency
• Switching-loss rating includes all "tail" losses


Specifications

 
Parameter
Max.
Unit
VCES Collector-to-Emitter Voltage
1200
V
IC @ TC = 25°C Continuous Collector Current
45
A
IC @ TC =100°C Continuous Collector Current
25
ICM Pulsed Collector Current
180
ILM Clamped Inductive Load Current
90
VGE Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C Maximum Power Dissipation
200
W
PD @ TC =100°C Maximum Power Dissipation
80
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to +150
°C
  Lead Temperature
300 (0.063in./1.6mm from case for 10s)
  Mounting torque, 6-32 or M3 screw.
10.5 (typical)
g



Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGIH50F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGIH50F provides substantial benefits to a host of high-voltage, high-current applications.

The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "),as well as an indication of the current handling capability of the device.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Transformers
TM-09210
BV222-1-00992
Line Protection, Backups
BX0023
A20B-1008-0550
Isolators
HCPL062N
HCPL316J
Audio Products
HUC1002
WM-64CT
Integrated Circuits (ICs)
TA8435H
1MB12-140
Tools
TCP202
G084SN05 V.3
View more