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IRGI4055PbF

Features: · Advanced Trench IGBT Technology· Optimized for Sustain and Energy Recovery circuits in PDP applications· Low VCE(on) and Energy per Pulse (EPULSE TM) for improved panel efficiency· High repetitive peak current capability· Lead Free packageSpecifications Parameter Max. Un...

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SeekIC No. : 004377834 Detail

IRGI4055PbF: Features: · Advanced Trench IGBT Technology· Optimized for Sustain and Energy Recovery circuits in PDP applications· Low VCE(on) and Energy per Pulse (EPULSE TM) for improved panel efficiency· High ...

IRGI4055PbF Data Sheet

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Part Number:
IRGI4055PbF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Description



Features:

· Advanced Trench IGBT Technology
· Optimized for Sustain and Energy Recovery circuits in PDP applications
· Low VCE(on) and Energy per Pulse (EPULSE TM) for improved panel efficiency
· High repetitive peak current capability
· Lead Free package


Specifications

 
Parameter
Max.
Unit
VGE Drain- Source Voltage
±30
V
ID @ TC= 25 Continuous Drain Current, VGE @ 15V
36
A
ID @ TC= 100 Continuous Drain Current, VGE @ 15V
18
A
IRP @ TC = 25 Repetitive Peak Current
220
A
PD @TC= 25 Power Dissipation
46
W
PD @TC= 100 Power Dissipation
19
W
  Linear Derating Factor
0.37
W/
TJ,TSTG Junction and Storage Temperature Range
-40 to + 175
  Soldering Temperature, for 10 seconds
(1.6mm from case)
300
  Mounting torque, 6-32 or M3 screw
10lb`in (1.1N`m)
N



Description

This IGBT IRGI4055PbF is specifically designed for applications in Plasma Display Panels. The IRGI4055PbF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSE TM rating per silicon area which improve panel efficiency. Additional features are 150 operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.




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