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IRGIB6B60KD

Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10s Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature CoefficientSpecifications Parameter Max. U...

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SeekIC No. : 004377840 Detail

IRGIB6B60KD: Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10s Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristi...

IRGIB6B60KD Data Sheet

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Part Number:
IRGIB6B60KD
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient


Specifications

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
ID @TC = 25°C Continuous Drain Current
11
A
ID @TC = 100°C Continuous Drain Current
7.0
ICM Pulse Collector Current (Ref.Fig.C.T.5)
22
ILM Clamped Inductive Load current
22
IF @ TC = 25°C Diode Continuous Forward Current
9.0
IF @ TC =100°C Diode Continuous Forward Current
6.0
IFM Diode Maximum Forward Current
18
VISOL RMS Isolation Voltage, Terminal to Case, t=1 min
2500
V
VGE Gate-to-Emitter Voltage
±20
PD @TC = 25°C Maximum Power Dissipation
38
W
PD @ TC =100°C Maximum Power Dissipation
19
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 Screw
10 lbf•in (1.1 N•m)



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