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IRGIB15B60KD1

Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10s Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature Coefficient.• Maximum Junction Temperature Rated at 1...

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SeekIC No. : 004377839 Detail

IRGIB15B60KD1: Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10s Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristi...

IRGIB15B60KD1 Data Sheet

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Part Number:
IRGIB15B60KD1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Description



Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175


Specifications

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
IC @ TC=25 Continuous Collector Current
19
A
IC @ TC=100 Continuous Collector Current
12
ICM Pulse Collector Current (Ref.Fig.C.T.5)
38
ILM Clamped Inductive Load current
38
IF @ TC=25 Diode Continuous Forward Current
19
IF @ TC=100 Diode Continuous Forward Current
12
IFM Diode Maximum Forward Current
38
VISOL RMS Isolation Voltage, Terminal to Case,t=1 min
2500
V
VGE Gate-to-Emitter Voltage
±20
PD @ TC=25 Maximum Power Dissipation
52
W
PD @ TC=100 Maximum Power Dissipation
26
TJ TSTG Operating Junction and
Storage Temperature Range
-55 to +175
  Soldering Temperature for 10 sec.
300(0.063 in. (1.6mm) from case)
  Mounting Torque, 6-32 or M3 Screw
10 lbf.in (1.1N.m)



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