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IRGIB10B60KD1PbF

Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10s Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature Coefficient.• Maximum Junction Temperature Rated at 1...

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SeekIC No. : 004377838 Detail

IRGIB10B60KD1PbF: Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10s Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristi...

IRGIB10B60KD1PbF Data Sheet

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Part Number:
IRGIB10B60KD1PbF
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C
• Lead-Free


Specifications

Parameter Symbol Rating Unit
Collector-to-Emitter Voltage VCES 600 V
Continuous Collector Current IC @ TC = 25 16 A
Continuous Collector Current IC @ TC = 100 10 A
Pulse Collector Current (Ref.Fig.C.T.5) ICM 32 A
Clamped Inductive Load current ILM 32  
Diode Continuous Forward Current IF @ TC = 25 16 A
Diode Continuous Forward Current IF @ TC = 100 10 A
Diode Maximum Forward Current IFM 32 A
RMS Isolation Voltage, Terminal to Case, t = 1 min VISOL 2500 V
Gate-to-Emitter Voltage VGE ±20 V
Maximum Power Dissipation PD @ TC = 25 44 W
Maximum Power Dissipation PD @ TC = 100 22 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 175
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf.in (1.1N.m)  



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