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IRGIB10B60KD1

Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10s Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature Coefficient.• Maximum Junction Temperature Rated at 1...

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IRGIB10B60KD1: Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10s Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristi...

IRGIB10B60KD1 Data Sheet

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Part Number:
IRGIB10B60KD1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175


Specifications

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
IC @ TC = 25 Continuous Collector Current
16
A
IC @ TC = 100 Continuous Collector Current
10
ICM Pulse Collector Current (Ref.Fig.C.T.5)
32
ILM Clamped Inductive Load current
32
IF @ TC = 25 Clamped Inductive Load current
16
IF @ TC = 100 Diode Continuous Forward Current
10
IFM Diode Maximum Forward Current
32
VISOL RMS Isolation Voltage, Terminal to Case, t = 1 min
2500
V
VGE Gate-to-Emitter Voltage
±20
PD @ TC = 25 Maximum Power Dissipation
44
W
PD @ TC = 100 Maximum Power Dissipation
22
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range
-55 to +175
TSTG
  Soldering Temperature for 10 sec.
300 (0.063 in. (1.6mm) from case)
  Mounting Torque, 6-32 or M3 Screw
10 lbf.in (1.1N.m)



Description

 


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