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IRGI4085PbF

Features: Advanced Trench IGBT Technology Optimized for Sustain and Energy Recoverycircuits in PDP applications Low VCE(on) and Energy per Pulse (EPULSE TM)for improved panel efficiency High repetitive peak current capabilityLead Free packageSpecifications Symbol Parameter Max. Unit...

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SeekIC No. : 004377836 Detail

IRGI4085PbF: Features: Advanced Trench IGBT Technology Optimized for Sustain and Energy Recoverycircuits in PDP applications Low VCE(on) and Energy per Pulse (EPULSE TM)for improved panel efficiency High repeti...

IRGI4085PbF Data Sheet

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Part Number:
IRGI4085PbF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/12

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Product Details

Description



Features:

Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSE TM)
for improved panel efficiency
High repetitive peak current capability
 Lead Free package


Specifications

Symbol
 Parameter
Max.
Units
VGE Gate-to-Emitter Voltage
±30
V
IC @TC= 25
 Continuous Collector Current, VGE @ 15V
28
A
IC @,TC= 100
 Continuous Collector, VGE @ 15V
15
IRP @ TC = 25
 Repetitive Peak Current
210
PD @TC= 25
 Power Dissipation
38
W
PD @TC = 100 Power Dissipation
15
 Linear Derating Factor
0.30
W/
TJ
TSTG
 Operating Junction and
Storage Temperature Range
-40 to + 150
Soldering Temperature for 10 seconds
300
  Mounting Torque, 6-32 or M3 Screw
10lb`in (1.1N` m)
N



Description

This IGBT IRGI4085PbF is specifically designed for applications in Plasma Display Panels. The IRGI4085PbF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSE TM rating per silicon area which improve panel efficiency. Additional features are 150 operating junction temperature and high repetitive peak current capability. The IRGI4085PbF  features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.




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