Features: Advanced Trench IGBT Technology Optimized for Sustain and Energy Recoverycircuits in PDP applications Low VCE(on) and Energy per Pulse (EPULSE TM)for improved panel efficiency High repetitive peak current capabilityLead Free packageSpecifications Symbol Parameter Max. Unit...
IRGI4085PbF: Features: Advanced Trench IGBT Technology Optimized for Sustain and Energy Recoverycircuits in PDP applications Low VCE(on) and Energy per Pulse (EPULSE TM)for improved panel efficiency High repeti...
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Features: · Advanced Trench IGBT Technology· Optimized for Sustain and Energy Recovery circuits in...
Symbol |
Parameter |
Max. |
Units |
VGE | Gate-to-Emitter Voltage |
±30 |
V |
IC @TC= 25 |
Continuous Collector Current, VGE @ 15V |
28 |
A |
IC @,TC= 100 |
Continuous Collector, VGE @ 15V |
15 | |
IRP @ TC = 25 |
Repetitive Peak Current |
210 | |
PD @TC= 25 |
Power Dissipation |
38 |
W |
PD @TC = 100 | Power Dissipation |
15 | |
Linear Derating Factor |
0.30 |
W/ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to + 150 |
|
Soldering Temperature for 10 seconds |
300 | ||
Mounting Torque, 6-32 or M3 Screw |
10lb`in (1.1N` m) |
N |
This IGBT IRGI4085PbF is specifically designed for applications in Plasma Display Panels. The IRGI4085PbF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSE TM rating per silicon area which improve panel efficiency. Additional features are 150 operating junction temperature and high repetitive peak current capability. The IRGI4085PbF features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.