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IRGI4065PbF

Features: ·Advanced Trench IGBT Technology ·Optimized for Sustain and Energy Recovery circuits in PDP applications·Low VCE(on) and Energy per Pulse (EPULSE TM) for improved panel efficiency ·High repetitive peak current capability ·Lead Free packageSpecifications Parameter Max. Units V...

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SeekIC No. : 004377835 Detail

IRGI4065PbF: Features: ·Advanced Trench IGBT Technology ·Optimized for Sustain and Energy Recovery circuits in PDP applications·Low VCE(on) and Energy per Pulse (EPULSE TM) for improved panel efficiency ·High re...

IRGI4065PbF Data Sheet

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Part Number:
IRGI4065PbF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/10

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Product Details

Description



Features:

·Advanced Trench IGBT Technology
·Optimized for Sustain and Energy Recovery
   circuits in PDP applications
·Low VCE(on)  and Energy per Pulse (EPULSE TM)
   for improved panel efficiency
·High repetitive peak current capability
·Lead Free package


Specifications

  Parameter Max. Units
VGE Gate-to-Emitter Voltage 30 V
IC@TC = 25
Continuous Collector Current,VGE@15V
 18 A
IC@ TC = 100

CContinuous Collector,VGE@15V 14
IRP@TC = 25


Repetitive Peak Current 		170
PD@ TC = 25 Power Dissipation 39 W
PD@ TC = 100 Power Dissipation 16
  Linear Derating Factor 0.31 W/
T J
TSTG		 Operating Junction and
Storage Temperature Range		 -40 to + 150
  Soldering Temperature for 10 seconds 300
  Mounting Torque, 6-32 or M3 Screw
10lb in (1.1N m)		 N



Description

This IGBT IRGI4065PbF is specifically designed for applications in Plasma Display Panels. The IRGI4065PbF utilizes advanced trench IGBT gy to achieve low VCE(on)   and low EPULSE TM  rating per silicon area which improve panel efficiency. Additional features re 150 operating junction temperature and high repetitive peak curren capability. The IRGI4065PbF features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.




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