Features: • Short circuit rated - 10s @ 125°C, VGE = 15V• Switching-loss rating includes all tail losses• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Emitte...
IRGBC40K-S: Features: • Short circuit rated - 10s @ 125°C, VGE = 15V• Switching-loss rating includes all tail losses• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Curren...
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
Parameter |
Max. |
Units | |
VCES | Collector-to-Emitter Voltage |
600 |
V |
IC @ TC = 25°C | Continuous Collector Current |
42 |
A |
IC @ TC = 100°C | Continuous Collector Current |
25 | |
ICM | Pulsed Collector Current |
84 | |
ILM | Clamped Inductive Load Current |
84 | |
tsc | Short Circuit Withstand Time |
10 |
s |
VGE | Gate-to-Emitter Voltage |
±20 |
V |
EARV | Reverse Voltage Avalanche Energy |
15 |
mJ |
PD @ TC = 25°C | Maximum Power Dissipation |
160 |
W |
PD @ TC = 100°C | Maximum Power Dissipation |
65 | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
Soldering Temperature, for 10 seconds |
300 (0.063 in. (1.6mm) from case) | ||
Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
Parameter |
Typ. |
Max. |
Units | |
RJC | Junction-to-Case |
- |
0.77 |
°C/W |
RJA | Junction-to-Ambient, (PCB Mount)** |
- |
40 | |
RJA | Junction-to-Ambient, typical socket mount |
- |
80 | |
Wt | Weight |
2.0 (0.07) |
- |
g(oz) |
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC40K-S have higher usable current densities than comparable bipolar transistors,while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC40K-S provides substantial benefits to a host of high-voltage, high-current applications.
These new short circuit rated devices IRGBC40K-S are especially suited for motor control and other applications requiring short circuit withstand capability.